MMBT3904 vishay semiconductors formerly general semiconductor document number 88224 www.vishay.com 10-may-02 1 new product small signal transistor (npn) features ?npn silicon epitaxial planar transistor for switching and amplifier applications. ?as complementary type, the pnp transistor mmbt3906 is recommended. ?this transistor is also available in the to-92 case with the type designation 2n3904. maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 40 v emitter-base voltage v ebo 6.0 v collector current i c 200 ma power dissipation at t a = 25 c p tot 225 (1) mw 300 (2) thermal resistance junction to substrate backside r sb 320 (1) c/w thermal resistance junction to ambient air r ja 450 (1) c/w junction temperature t j 150 c storage temperature range t s 65 to +150 c note: (1) device on fiberglass substrate, see layout. (2) device on alumina substrate. mechanical data case: sot-23 plastic package weight: approx. 0.008g marking code: 1am packaging codes/options: e8/10k per 13 reel (8mm tape), 30k/box e9/3k per 7 reel (8mm tape), 30k/box .016 (0.4) .056 (1.43 ) .037(0.95) .037(0.95) max. .004 (0.1) .122 (3.1) .016 (0.4) .016 (0.4) 1 2 3 top view .102 (2.6) .007 (0.175) .045 (1.15) .110 (2.8) .052 (1.33 ) .005 (0.125) .094 (2.4) .037 (0.95) to-236ab (sot-23) dimensions in inches and (millimeters) pin configuration 1 = base 2 = emitter 3 = collector 0.079 (2.0) 0.037 (0.95) 0.035 (0.9) 0.031 (0.8) 0.037 (0.95) mounting pad layout
MMBT3904 vishay semiconductors formerly general semiconductor www.vishay.com document number 88224 2 10-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit v ce = 1 v, i c = 0.1 ma 40 v ce = 1 v, i c = 1 ma 70 dc current gain h fe v ce = 1 v, i c = 10 ma 100 300 v ce = 1 v, i c = 50 ma 60 v ce = 1 v, i c = 100 ma 30 collector-base breakdown voltage v (br)cbo i c = 10 a, i e = 0 60 v collector-emitter breakdown voltage v (br)ceo i c = 1 ma, i b = 0 40 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c = 0 6.0 v collector saturation voltage v cesat i c = 10 ma, i b = 1 ma 0.2 v i c = 50 ma, i b = 5 ma 0.3 base saturation voltage v besat i c = 10 ma, i b = 1 ma 0.85 v i c = 50 ma, i b = 5 ma 0.95 collector-emitter cut-off current i cev v eb = 3 v, v ce = 30 v 50 na emitter-base cut-off current i ebv v eb = 3 v, v ce = 30 v 50 na gain-bandwidth product f t v ce = 20 v, i c = 10 ma 300 mhz f = 100 mhz collector-base capacitance c cbo v cb = 5 v, f = 100 khz 4pf emitter-base capacitance c ebo v eb = 0.5 v, f = 100 khz 8pf 0.59 (15) 0.2 (5) 0.03 (0.8) 0.30 (7.5) 0.12 (3) .04 (1) 0.06 (1.5) 0.20 (5.1) .08 (2) .08 (2) .04 (1) 0.47 (12) dimensions in inches and (millimeters)
MMBT3904 vishay semiconductors formerly general semiconductor document number 88224 www.vishay.com 10-may-02 3 fig. 1: test circuit for delay and rise time * total shunt capacitance of test jig and connectors fig. 2: test circuit for storage and fall time * total shunt capacitance of test jig and connectors electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit noise figure nf v ce =5v, i c = 100 a, 5db r g =1k ? , f = 10...15000 hz input impedance h ie v ce = 10 v, i c = 1 ma, 1 10 k ? f = 1 khz small signal current gain h fe v ce = 10 v, i c = 1 ma, 100 400 f = 1 khz voltage feedback ratio h re v ce = 10 v, i c = 1 ma, 0.5 10 -4 8 10 -4 f = 1 khz output admittance h oe v ce = 1 v, i c = 1 ma, 1 40 s f = 1 khz delay time (see fig. 1) t d i b1 = 1 ma, i c = 10 ma 35 ns rise time (see fig. 1) t r i b1 = 1 ma, i c = 10 ma 35 ns storage time (see fig. 2) t s i b1 = i b2 = 1 ma, i c = 10 ma 200 ns fall time (see fig. 2) t f i b1 = i b2 = 1 ma, i c = 10 ma 50 ns
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